Semiconductor packaging and methods of forming same

ABSTRACT

A package includes a first semiconductor substrate; an integrated circuit die bonded to the first semiconductor substrate with a dielectric-to-dielectric bond; a molding compound over the first semiconductor substrate and around the integrated circuit die; and a redistribution structure over the first semiconductor substrate and the integrated circuit die, wherein the redistribution structure is electrically connected to the integrated circuit die. The integrated circuit die includes a second semiconductor substrate, and wherein the second semiconductor substrate comprises a first sidewall, a second sidewall, and a third sidewall opposite the first sidewall and the second sidewall, and the second sidewall is offset from the first sidewall.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.63/140,290, filed on Jan. 22, 2021, which application is herebyincorporated herein by reference.

BACKGROUND

The semiconductor industry has experienced rapid growth due to ongoingimprovements in the integration density of a variety of electroniccomponents (e.g., transistors, diodes, resistors, capacitors, etc.). Forthe most part, improvement in integration density has resulted fromiterative reduction of minimum feature size, which allows morecomponents to be integrated into a given area. As the demand forshrinking electronic devices has grown, a need for smaller and morecreative packaging techniques of semiconductor dies has emerged. Anexample of such packaging systems is Package-on-Package (PoP)technology. In a PoP device, a top semiconductor package is stacked ontop of a bottom semiconductor package to provide a high level ofintegration and component density. PoP technology generally enablesproduction of semiconductor devices with enhanced functionalities andsmall footprints on a printed circuit board (PCB).

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of an integrated circuit diein accordance with some embodiments.

FIGS. 2, 3, 4, 5A, 5B, 6A, 6B, 6C, 7, 8, 9, 10, 11, 12A, 12B, and 12Cillustrate cross-sectional views of intermediate steps during a processfor forming a package component in accordance with some embodiments.

FIGS. 13, 14A, and 14B illustrate cross-sectional views of formation andimplementation of device stacks in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In accordance with some embodiments, a semiconductor package includes amolded die that is bonded to a bulk semiconductor substrate, such as abulk silicon substrate or the like. The semiconductor substrate canincrease the volume of semiconductor material in the package to improvethermal dissipation. Further, the semiconductor substrate is notencapsulated in a molding compound, and the inclusion of thesemiconductor substrate does not significantly increasing the volume ofthe molding compound in the semiconductor package. As a result, defectsassociated with increased molding compound volume, such as poor warpagecontrol or the like, can be avoided.

FIG. 1 illustrates a cross-sectional view of integrated circuit dies 50in accordance with some embodiments. The integrated circuit dies 50 willbe packaged in subsequent processing to form an integrated circuitpackage. Each integrated circuit die 50 may be a logic die (e.g.,central processing unit (CPU), graphics processing unit (GPU),system-on-a-chip (SoC), application processor (AP), microcontroller,etc.), a memory die (e.g., dynamic random access memory (DRAM) die,static random access memory (SRAM) die, etc.), a power management die(e.g., power management integrated circuit (PMIC) die), a radiofrequency (RF) die, a sensor die, a micro-electro-mechanical-system(MEMS) die, a signal processing die (e.g., digital signal processing(DSP) die), a front-end die (e.g., analog front-end (AFE) dies), thelike, or combinations thereof.

The integrated circuit dies 50 may be formed in a wafer 70, which mayinclude different multiple integrated circuit dies 50 that are separatedby scribe line regions 55. The integrated circuit dies 50 may beprocessed according to applicable manufacturing processes to formintegrated circuits. For example, each integrated circuit die 50includes a semiconductor substrate 52, such as silicon, doped orundoped, or an active layer of a semiconductor-on-insulator (SOI)substrate. The semiconductor substrate 52 may include othersemiconductor materials, such as germanium; a compound semiconductorincluding silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide; an alloysemiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GalnAs, GaInP,and/or GaInAsP; or combinations thereof. Other substrates, such asmulti-layered or gradient substrates, may also be used. Thesemiconductor substrate 52 has an active surface (e.g., the surfacefacing upwards in FIG. 1), sometimes called a front side, and aninactive surface (e.g., the surface facing downwards in FIG. 1),sometimes called a back side.

Devices (represented by a transistor) 54 may be formed at the frontsurface of the semiconductor substrate 52. The devices 54 may be activedevices (e.g., transistors, diodes, etc.), capacitors, resistors, etc.An inter-layer dielectric (ILD) 56 is over the front surface of thesemiconductor substrate 52. The ILD 56 surrounds and may cover thedevices 54. The ILD 56 may include one or more dielectric layers formedof materials such as Phospho-Silicate Glass (PSG), Boro-Silicate Glass(BSG), Boron-Doped Phospho-Silicate Glass (BPSG), undoped Silicate Glass(USG), or the like.

Conductive plugs 58 extend through the ILD 56 to electrically andphysically couple the devices 54. For example, when the devices 54 aretransistors, the conductive plugs 58 may couple the gates andsource/drain regions of the transistors. The conductive plugs 58 may beformed of tungsten, cobalt, nickel, copper, silver, gold, aluminum, thelike, or combinations thereof. An interconnect structure 60 is over theILD 56 and conductive plugs 58. The interconnect structure 60interconnects the devices 54 to form an integrated circuit. Theinterconnect structure 60 may be formed by, for example, metallizationpatterns in dielectric layers on the ILD 56. The metallization patternsinclude metal lines and vias formed in one or more low-k dielectriclayers. The metallization patterns of the interconnect structure 60 areelectrically coupled to the devices 54 by the conductive plugs 58.

The integrated circuit dies 50 further include pads 62, such as aluminumpads, to which external connections are made. The pads 62 are on theactive side of the integrated circuit die 50, such as in and/or on theinterconnect structure 60. One or more passivation films 64 are on theintegrated circuit die 50, such as on portions of the interconnectstructure 60 and pads 62. Openings extend through the passivation films64 to the pads 62. Die connectors 66, such as conductive pillars (forexample, formed of a metal such as copper), extend through the openingsin the passivation films 64 and are physically and electrically coupledto respective ones of the pads 62. The die connectors 66 may be formedby, for example, plating, or the like. The die connectors 66electrically couple the respective integrated circuits of the integratedcircuit dies 50.

Optionally, solder regions (e.g., solder balls or solder bumps) may bedisposed on the pads 62. The solder balls may be used to perform chipprobe (CP) testing on the integrated circuit die 50. CP testing may beperformed on the integrated circuit die 50 to ascertain whether eachintegrated circuit die 50 is a known good die (KGD). Thus, onlyintegrated circuit dies 50, which are KGDs, undergo subsequentprocessing are packaged, and dies, which fail the CP testing, are notpackaged. After testing, the solder regions may be removed in subsequentprocessing steps.

A dielectric layer 68 may (or may not) be on the active side of theintegrated circuit die 50, such as on the passivation films 64 and thedie connectors 66. The dielectric layer 68 laterally encapsulates thedie connectors 66, and the dielectric layer 68 is laterally coterminouswith the integrated circuit die 50. Initially, the dielectric layer 68may bury the die connectors 66, such that the topmost surface of thedielectric layer 68 is above the topmost surfaces of the die connectors66. In some embodiments where solder regions are disposed on the dieconnectors 66, the dielectric layer 68 may bury the solder regions aswell. Alternatively, the solder regions may be removed prior to formingthe dielectric layer 68.

The dielectric layer 68 may be a polymer such as PBO, polyimide, BCB, orthe like; a nitride such as silicon nitride or the like; an oxide suchas silicon oxide, PSG, BSG, BPSG, or the like; the like, or acombination thereof. The dielectric layer 68 may be formed, for example,by spin coating, lamination, chemical vapor deposition (CVD), or thelike. In some embodiments, the die connectors 66 are exposed through thedielectric layer 68 during formation of the integrated circuit die 50.In some embodiments, the die connectors 66 remain buried and are exposedduring a subsequent process for packaging the integrated circuit die 50.Exposing the die connectors 66 may remove any solder regions that may bepresent on the die connectors 66.

FIGS. 2 through 6C illustrate intermediate steps of singulating theintegrated circuit dies 50 from the wafer 70 according to someembodiments. In FIG. 2, a carrier substrate 102 is provided, and abonding film 104 is formed on the carrier substrate 102. The carriersubstrate 102 may be a glass carrier substrate, a ceramic carriersubstrate, or the like. The carrier substrate 102 may be a wafer, suchthat multiple packages can be formed on the carrier substrate 102simultaneously.

The bonding film 104 may deposited over the carrier substrate 102. Thebonding film 104 may comprise silicon oxide, silicon nitride, siliconoxynitride, or the like, and the bonding film 104 may be deposited usinga suitable deposition process such as chemical vapor deposition (CVD),physical vapor deposition (PVD), atomic layer deposition (ALD), or thelike. Optionally, a planarization step may then be performed to level atop surface of the bonding film 104 such that the bonding film 104 has ahigh degree of planarity.

The wafer 70 comprising the integrated circuit dies 50 is attached tothe carrier substrate 102 and bonding film 104 by an bonding layer 105.The bonding layer 105 may be formed a similar material as the bondinglayer 104, and the bonding film 105 may be deposited on a front sidesurface of the wafer 70 using a similar process as the bonding film 104.For example, the bonding film 105 may be deposited over the dielectriclayer 68 of the wafer 70 by CVD, PVD, ALD, or the like.

The wafer 70 is attached face down such that the front sides of thewafer 70 faces the carrier substrate 102 and the bonding film 105 isdirectly bonded to the bonding layer 104 by an oxide-to-oxide bond orthe like. An example bonding process starts by applying a surfacetreatment to one or more of the bonding layers 104 or 105. The surfacetreatment may include a plasma treatment, which may be performed in avacuum environment. After the plasma treatment, the surface treatmentmay further include a cleaning process (e.g., a rinse with deionizedwater, or the like) that may be applied to one or more of the bondinglayers 104 or 105. The bonding process may then proceed to aligningwafer 70 to the carrier substrate 102. Next, the bonding processincludes a pre-bonding step during which the bonding layer 105 of thewafer 70 is put in contact with the bonding layer 104 on the carriersubstrate 102. The pre-bonding may be performed at room temperature(e.g., between about 21° C. and about 25° C.). The bonding processcontinues with performing an anneal, for example, at a temperaturebetween about 150° C. and about 400° C. for a duration between about 0.5hours and about 3 hours, so that oxide-to-oxide bonds are formed betweenthe bonding layers 104 and 105.

In FIG. 3, the wafer 70 is thinned. The thinning process may include amechanical polish, a CMP process, an etch back process, or the like thatis applied to the substrate 52 of the wafer 70. In subsequent processes,a molding compound may be formed around singulated dies 50 of the wafer70. Accordingly, by thinning the wafer 70, a volume of molding compoundused subsequently may be reduced for improved warpage control. Further,thinning the wafers 70 may facilitate and reduce defects (e.g.,delamination) resulting from subsequent singulation processes. Afterthinning, the wafer 70 may have a thickness T1 in a range of about 150μm to about 200 μm. It has been observed that when the wafer 70 isthinned beyond this range (e.g., when the thickness T1 is less thanabout 150 μm), thermal dissipation is not sufficient in the resultingpackage. It has been observed that when the wafer 70 is thinned toolittle (e.g., when the thickness T1 is greater than about 200 μm),excess molding compound is used to encapsulate the dies 50, and theresulting package has poor warpage control.

As further illustrated by FIG. 3, a bonding film 118 is deposited on theback side of wafer 70. The bonding film 118 maybe deposited using asimilar method and be formed of a similar material as the bonding film104 described above. In some embodiments, the bonding film 118 may havea thickness T2 in a range of about _1,000 Å_ to about _5,000 Å_.

In FIG. 4, the bond film 118 and substrate 52 of the wafers 70 may bepatterned to form recesses 119 in scribe line regions 55. Patterning therecesses 119 may be done be a combination of photolithography andetching, for example. The etching process may be a dry etch process insome embodiments, and the etching process may further be anisotropic.After etching, an optional cleaning process may be applied to removeetching residue and other contaminants from surfaces of the substrate 52that are exposed by the recesses 119. The resulting recesses 119 mayhave a width W1 in a range of about 60 μm to about 100 μm. The recessesmay be formed to provide an improved sidewall profile (e.g., morevertical), reduce chipping, and reduce delamination in subsequentsingulation processes.

In FIG. 5A, the package component 100 is then flipped over and placed ona frame 119. The carrier substrate 102, the bonding layer 104, and thebonding layer 105 may then be removed by grinding, etching (e.g., wetetching), CMP, combinations thereof, or the like to expose thedielectric layer 68 of the wafers 70.

The integrated circuit dies 50 are then singulated from the wafer 70. Insome embodiments, singulation includes applying a blade 120 to thescribe line regions 55 to saw or cut through wafers 70 to the recesses70. As a result, a kerf 121 is formed between adjacent integratedcircuit dies 50, and the integrated circuit dies 50 are separated fromeach other. In some embodiments, the blade 120 is aligned with a centerof the recesses 119, such that the kerfs 121 are symmetrical with therecesses 119. In other embodiments, 120 may be offset from centers ofthe recesses 119 such that kerfs are asymmetrical with the recesses 119.During sawing, a position of the blade 120 may shift in a lateraldirection by about 5 μm or less, and the resulting kerfs 121 may have awidth W2 in a range of about 40 μm to about 60 μm.

FIG. 5B illustrates a top down view of the wafer 70. As illustrated,each of the dies 50 are surrounded by a seal ring 57. The dies areseparated by the scribe line regions 55. A width W2 of the kerfs 121 maybe less than a width W1 of the recesses 119. Other configurations arealso possible.

FIGS. 6A through 6C illustrate detailed views of the dies 50 aftersingulation according to some embodiments. FIG. 6A illustrates a die 50resulting from a symmetrical singulation process where the blade 120 isaligned with centers of the recesses 119. In the resulting structure,the substrate 52 includes sidewalls 52A and 52C, which are offset fromsidewalls 52B and 52D, respectively. Specifically, the sidewall 52A isoffset from the sidewall 52B by a distance D1, and the sidewall 52C isoffset from the sidewall 52D by the same distance D1. In someembodiments the distance D1 may in a range of about 5 μm to about 10 μm.Sidewalls of the bonding layer 118 are aligned with the sidewalls 52Aand 52C.

FIGS. 6B and 6C illustrate a die 50 resulting from an asymmetricalsingulation process where the blade 120 is offset from centers of therecesses 119. In the resulting structure of FIG. 6B, the sidewall 52A ofthe substrate 52 is offset from the sidewall 52B of the substrate 52 bya distance D2, and the sidewall 52C of the substrate 52 is offset fromthe sidewall 52D of the substrate 52 by a distance D3 different than thedistance D2. Specifically, the distance D2 may be greater than or lessthan the distance D3. In such embodiments, each of the distances D2 andD3 may be in a range of about 5 μm to about 10 μm. In the structure ofFIG. 6C, the substrate 52 includes a sidewall 52A that is offset from asidewall 52B by a distance D4, which may be in a range of about 5 μm toabout 10 μm. The substrate 52 further includes a sidewall 52C whichextends linearly and continuously from the interconnect structure 60 tothe bonding layer 118. Other configurations may also be possible. Inboth FIGS. 6B and 6C, sidewalls of the bonding layer 118 are alignedwith the sidewalls 52A and 52C.

FIGS. 7 through 12C illustrate intermediate steps forming asemiconductor package 100 comprising the singulated, integrated circuitdies 50. A first package region 100A and a second package region 100Bare illustrated, and one or more of the integrated circuit dies 50 arepackaged to form an integrated circuit package in each of the packageregions 100A and 100B. The integrated circuit packages may also bereferred to as integrated fan-out (InFO) packages.

In FIG. 7, the singulated dies 50 are attached to a bulk semiconductorsubstrate 127 in each of the package regions 100A and 100B. Although twodies 50 are illustrated as being attached in each of the package regions100A and 100B, a greater or fewer number of dies 50 may be attached ineach package region in other embodiments. The semiconductor substrate127 may comprise a semiconductor material such as silicon or the like.The semiconductor substrate 127 may be free of any active or passivedevices in some embodiments. A dielectric layer 123 is formed on thesemiconductor substrate 127, and an alignment mark 125 may be disposedin the dielectric layer 123. In some embodiments, the dielectric layer123 may comprise silicon oxide, silicon nitride, silicon oxynitride, apolymer, or the like and be deposited by PVD, CVD, ALD, or the like.Further, the alignment mark 125 may comprise a conductive material,which is formed in the dielectric layer 123 by a damascene process forexample. Other materials and formation methods are also possible. Thealignment mark 125 may facilitate accurate placement of the dies 50 onthe semiconductor substrate 127 in each of the package regions 100A and100B.

A bonding layer 121 is deposited over the dielectric layer 123 and thealignment mark 125. In some embodiments, the bonding layer 121 maycomprise a similar material and be formed of a similar process asdescribed above with respect to the bonding layer 104. The dies 50 maybe bonded to the bonding layer 121 using the bonding layer 118. Forexample, the bonding layers 118 and 121 may be directly bonded withoxide-to-oxide bonds using a similar process as described above withrespect to bonding the bonding layers 104 and 105.

In various embodiments, the addition of the semiconductor substrate 127allows for enhanced thermal dissipation from the dies 50. The materialof the semiconductor substrates 52 and 127 (e.g., silicon) may haverelatively high thermal dissipation properties, and increasing thevolume of the material with the addition of the semiconductor substrate127 may improve thermal dissipation in the resulting package. In someembodiments, the semiconductor substrate 127 has a thickness T3 in arange of about 70 μm to about 270 μm, and a ratio between thethicknesses T3 of the semiconductor substrate to a thickness T4 of thesubstrates 52 may be in a range of about 0.5 to about 2 such as in arange of about 1 to about 2. It has been observed that by adding asemiconductor substrate 127 in the above ranges, thermal dissipation inthe resulting package may be sufficiently improved.

In FIG. 8, an encapsulant 142 is formed around the integrated circuitdies 50 and over the semiconductor substrate 127. After formation, theencapsulant 142 encapsulates the integrated circuit dies 50. Theencapsulant 142 may be a molding compound, epoxy, or the like. Theencapsulant 142 may be applied by compression molding, transfer molding,or the like, and may be formed over the carrier substrate 102 such thatthe integrated circuit dies 50 are buried or covered. The encapsulant142 is further formed in gap regions between the integrated circuit dies50. The encapsulant 142 may be applied in liquid or semi-liquid form andthen subsequently cured. Because the encapsulant 142 is not dispensedaround the semiconductor substrate 127, a volume of the encapsulant 142in the resulting packages is not increased even with the increasedvolume of thermally conductive, semiconductor material. Accordingly,warpage control in the resulting package is maintained at an acceptablelevel.

In FIG. 9, a planarization process is performed on the encapsulant 142to expose die connectors 66. The planarization process may also removematerial of dielectric layer 68, and/or die connectors 66 until the dieconnectors 66 are exposed. Top surfaces of the die connectors 66,dielectric layer 68, and encapsulant 142 are substantially coplanarafter the planarization process within process variations. Theplanarization process may be, for example, a chemical-mechanical polish(CMP), a grinding process, or the like. In some embodiments, theplanarization may be omitted, for example, if the die connectors 66 arealready exposed.

In FIG. 10, a front-side redistribution structure 122 is formed over theencapsulant 142 and integrated circuit dies 50. The front-sideredistribution structure 122 includes dielectric layers 124, 128, 132,and 136; and metallization patterns 126, 130, and 134. The metallizationpatterns may also be referred to as redistribution layers orredistribution lines. The front-side redistribution structure 122 isshown as an example having three layers of metallization patterns. Moreor fewer dielectric layers and metallization patterns may be formed inthe front-side redistribution structure 122. If fewer dielectric layersand metallization patterns are to be formed, steps and process discussedbelow may be omitted. If more dielectric layers and metallizationpatterns are to be formed, steps and processes discussed below may berepeated.

As an example of forming the redistribution structure 122, thedielectric layer 124 is deposited on the encapsulant 142 and dieconnectors 66. In some embodiments, the dielectric layer 124 is formedof a photo-sensitive material such as PBO, polyimide, BCB, or the like,which may be patterned using a lithography mask. The dielectric layer124 may be formed by spin coating, lamination, CVD, the like, or acombination thereof. The dielectric layer 124 is then patterned. Thepatterning forms openings exposing portions of the through vias 116 andthe die connectors 66. The patterning may be by an acceptable process,such as by exposing and developing the dielectric layer 124 to lightwhen the dielectric layer 124 is a photo-sensitive material or byetching using, for example, an anisotropic etch.

The metallization pattern 126 is then formed. The metallization pattern126 includes conductive elements extending along the major surface ofthe dielectric layer 124 and extending through the dielectric layer 124to physically and electrically couple to the integrated circuit dies 50.As an example to form the metallization pattern 126, a seed layer isformed over the dielectric layer 124 and in the openings extendingthrough the dielectric layer 124. In some embodiments, the seed layer isa metal layer, which may be a single layer or a composite layercomprising a plurality of sub-layers formed of different materials. Insome embodiments, the seed layer comprises a titanium layer and a copperlayer over the titanium layer. The seed layer may be formed using, forexample, PVD or the like. A photoresist is then formed and patterned onthe seed layer. The photoresist may be formed by spin coating or thelike and may be exposed to light for patterning. The pattern of thephotoresist corresponds to the metallization pattern 126. The patterningforms openings through the photoresist to expose the seed layer. Aconductive material is then formed in the openings of the photoresistand on the exposed portions of the seed layer. The conductive materialmay be formed by plating, such as electroplating or electroless plating,or the like. The conductive material may comprise a metal, like copper,titanium, tungsten, aluminum, or the like. The combination of theconductive material and underlying portions of the seed layer form themetallization pattern 126. The photoresist and portions of the seedlayer on which the conductive material is not formed are removed. Thephotoresist may be removed by an acceptable ashing or stripping process,such as using an oxygen plasma or the like. Once the photoresist isremoved, exposed portions of the seed layer are removed, such as byusing an acceptable etching process, such as by wet or dry etching.

The dielectric layer 128 is deposited on the metallization pattern 126and dielectric layer 124. The dielectric layer 128 may be formed in amanner similar to the dielectric layer 124, and may be formed of asimilar material as the dielectric layer 124.

The metallization pattern 130 is then formed. The metallization pattern130 includes portions on and extending along the major surface of thedielectric layer 128. The metallization pattern 130 further includesportions extending through the dielectric layer 128 to physically andelectrically couple the metallization pattern 126. The metallizationpattern 130 may be formed in a similar manner and of a similar materialas the metallization pattern 126. In some embodiments, the metallizationpattern 130 has a different size than the metallization pattern 126. Forexample, the conductive lines and/or vias of the metallization pattern130 may be wider or thicker than the conductive lines and/or vias of themetallization pattern 126. Further, the metallization pattern 130 may beformed to a greater pitch than the metallization pattern 126.

The dielectric layer 132 is deposited on the metallization pattern 130and dielectric layer 128. The dielectric layer 132 may be formed in amanner similar to the dielectric layer 124, and may be formed of asimilar material as the dielectric layer 124.

The metallization pattern 134 is then formed. The metallization pattern134 includes portions on and extending along the major surface of thedielectric layer 132. The metallization pattern 134 further includesportions extending through the dielectric layer 132 to physically andelectrically couple the metallization pattern 130. The metallizationpattern 134 may be formed in a similar manner and of a similar materialas the metallization pattern 126. The metallization pattern 134 may bethe topmost metallization pattern of the front-side redistributionstructure 122. As such, all of the intermediate metallization patternsof the front-side redistribution structure 122 (e.g., the metallizationpatterns 126 and 130) are disposed between the metallization pattern 134and the integrated circuit dies 50 in some embodiments. In someembodiments, the metallization pattern 134 has a different size than themetallization patterns 126 and 130. For example, the conductive linesand/or vias of the metallization pattern 134 may be wider or thickerthan the conductive lines and/or vias of the metallization patterns 126and 130. Further, the metallization pattern 134 may be formed to agreater pitch than the metallization pattern 130.

The dielectric layer 136 is deposited on the metallization pattern 134and dielectric layer 132. The dielectric layer 136 may be formed in amanner similar to the dielectric layer 124, and may be formed of thesame material as the dielectric layer 124. The dielectric layer 136 maybe the topmost dielectric layer of the front-side redistributionstructure 122. As such, all of the metallization patterns of thefront-side redistribution structure 122 (e.g., the metallizationpatterns 126, 130, and 134) are disposed between the dielectric layer136 and the integrated circuit dies 50A and 50B in some embodiments.Further, all of the intermediate dielectric layers of the front-sideredistribution structure 122 (e.g., the dielectric layers 124, 128, 132)are disposed between the dielectric layer 136 and the integrated circuitdies 50.

UBMs 138 are formed for external connection to the front-sideredistribution structure 122. The UBMs 138 have bump portions on andextending along the major surface of the dielectric layer 136, and havevia portions extending through the dielectric layer 136 to physicallyand electrically couple the metallization pattern 134. As a result, theUBMs 138 are electrically coupled to the integrated circuit dies 50. TheUBMs 138 may be formed of the same material as the metallization pattern126. In some embodiments, the UBMs 138 has a different size than themetallization patterns 126, 130, and 134.

Conductive connectors 150 are formed on the UBMs 138. The conductiveconnectors 150 may be ball grid array (BGA) connectors, solder balls,metal pillars, controlled collapse chip connection (C4) bumps, microbumps, electroless nickel-electroless palladium-immersion gold technique(ENEPIG) formed bumps, or the like. The conductive connectors 150 mayinclude a conductive material such as solder, copper, aluminum, gold,nickel, silver, palladium, tin, the like, or a combination thereof. Insome embodiments, the conductive connectors 150 are formed by initiallyforming a layer of solder through evaporation, electroplating, printing,solder transfer, ball placement, or the like. Once a layer of solder hasbeen formed on the structure, a reflow may be performed in order toshape the material into the desired bump shapes. In another embodiment,the conductive connectors 150 comprise metal pillars (such as a copperpillar) formed by a sputtering, printing, electro plating, electrolessplating, CVD, or the like. The metal pillars may be solder free and havesubstantially vertical sidewalls. In some embodiments, a metal cap layeris formed on the top of the metal pillars. The metal cap layer mayinclude nickel, tin, tin-lead, gold, silver, palladium, indium,nickel-palladium-gold, nickel-gold, the like, or a combination thereofand may be formed by a plating process.

In FIG. 11, a singulation process may be applied to separate thepackages 100 in each of the package regions 100A and 100B. Anorientation of the packages 100 may be flipped, and the packages 100 maybe attached to a tape (not shown). Further, one or more passivationlayers may be optionally deposited on a surface the semiconductorsubstrate 127 opposite the integrated circuit dies 50 and theredistribution structure 122. For example, a die attach film (DAF) 135and a dielectric layer 137 may be formed on exposed surfaces of thesemiconductor substrate 127. The dielectric layer 137 may comprisesilicon nitride, silicon oxynitride, a polymer material (e.g.,polybenzoxazole (PBO), polyimide), or the like. The DAF 135 and thedielectric layer 137 may be deposited by CVD, PVD, ALD, combinationsthereof, or the like. The DAF 135 and the dielectric layer 137 may beused to protect and reduce oxidation on the exposed surfaces of thesemiconductor substrate 127. The DAF 135 and the dielectric layer 137are optional, and the DAF 135 and/or the dielectric layer 137 may beomitted in other embodiments.

In FIG. 12A, each singulated first package component 100 may then bemounted to a package substrate 300 using the conductive connectors 150.The package substrate 300 includes a substrate core 302 and bond pads304 over the substrate core 302. The substrate core 302 may be made of asemiconductor material such as silicon, germanium, diamond, or the like.Alternatively, compound materials such as silicon germanium, siliconcarbide, gallium arsenic, indium arsenide, indium phosphide, silicongermanium carbide, gallium arsenic phosphide, gallium indium phosphide,combinations of these, and the like, may also be used. Additionally, thesubstrate core 302 may be a SOI substrate. Generally, an SOI substrateincludes a layer of a semiconductor material such as epitaxial silicon,germanium, silicon germanium, SOI, SGOI, or combinations thereof. Thesubstrate core 302 is, in one alternative embodiment, based on aninsulating core such as a fiberglass reinforced resin core. One examplecore material is fiberglass resin such as FR4. Alternatives for the corematerial include bismaleimide-triazine BT resin, or alternatively, otherPCB materials or films. Build up films such as ABF or other laminatesmay be used for substrate core 302.

The substrate core 302 may include active and passive devices (notshown). A wide variety of devices such as transistors, capacitors,resistors, combinations of these, and the like may be used to generatethe structural and functional requirements of the design for the devicestack. The devices may be formed using any suitable methods.

The substrate core 302 may also include metallization layers and vias(not shown), with the bond pads 304 being physically and/or electricallycoupled to the metallization layers and vias. The metallization layersmay be formed over the active and passive devices and are designed toconnect the various devices to form functional circuitry. Themetallization layers may be formed of alternating layers of dielectric(e.g., low-k dielectric material) and conductive material (e.g., copper)with vias interconnecting the layers of conductive material and may beformed through any suitable process (such as deposition, damascene, dualdamascene, or the like). In some embodiments, the substrate core 302 issubstantially free of active and passive devices.

In some embodiments, the conductive connectors 150 are reflowed toattach the first package component 100 to the bond pads 304. Theconductive connectors 150 electrically and/or physically couple thepackage substrate 300, including metallization layers in the substratecore 302, to the first package component 100. In some embodiments, asolder resist 306 is formed on the substrate core 302. The conductiveconnectors 150 may be disposed in openings in the solder resist 306 tobe electrically and mechanically coupled to the bond pads 304. Thesolder resist 306 may be used to protect areas of the substrate 302 fromexternal damage.

The conductive connectors 150 may have an epoxy flux (not shown) formedthereon before they are reflowed with at least some of the epoxy portionof the epoxy flux remaining after the first package component 100 isattached to the package substrate 300. This remaining epoxy portion mayact as an underfill to reduce stress and protect the joints resultingfrom the reflowing the conductive connectors 150. In some embodiments,an underfill 308 may be formed between the first package component 100and the package substrate 300 and surrounding the conductive connectors150. The underfill 308 may be formed by a capillary flow process afterthe first package component 100 is attached or may be formed by asuitable deposition method before the first package component 100 isattached.

In some embodiments, passive devices (e.g., surface mount devices(SMDs), not shown) may also be attached to the first package component100 (e.g., to the UBMs 138) or to the package substrate 300 (e.g., tothe bond pads 304). For example, the passive devices may be bonded to asame surface of the first package component 100 or the package substrate300 as the conductive connectors 150. The passive devices may beattached to the package component 100 prior to mounting the firstpackage component 100 on the package substrate 300, or may be attachedto the package substrate 300 prior to or after mounting the firstpackage component 100 on the package substrate 300.

Thus, a semiconductor package 400 is manufactured. Other features andprocesses may also be included. For example, testing structures may beincluded to aid in the verification testing of the 3D packaging or 3DICdevices. The testing structures may include, for example, test padsformed in a redistribution layer or on a substrate that allows thetesting of the 3D packaging or 3DIC, the use of probes and/or probecards, and the like. The verification testing may be performed onintermediate structures as well as the final structure. Additionally,the structures and methods disclosed herein may be used in conjunctionwith testing methodologies that incorporate intermediate verification ofknown good dies to increase the yield and decrease costs.

FIG. 12A illustrates an embodiment comprising dies 50, which correspondto the configuration of FIG. 6A where a symmetrical singulation processis applied to the wafer 70. Other embodiments may include dies that aresingulated with an asymmetrical singulation process. For example, FIGS.12B and 12C illustrate alternate embodiments where like referencenumerals indicate like elements formed by liked processes as theembodiments of FIG. 12A. However, the dies 50 in FIGS. 12B and 12C maycorrespond to the configurations of FIGS. 6B and 6C, respectively, thatare singulated from the wafer 70 with asymmetrical singulationprocesses.

FIGS. 13, 14A, and 14B illustrate varying views of a semiconductorpackage 500 according to some alternate embodiments. The semiconductorpackage 500 may be similar to the semiconductor package 400 where likereference numerals indicate like elements formed by like processes.However, the semiconductor substrate 127 of the package 500 furtherincludes conductive vias 133, which extend at least partially throughthe semiconductor substrate 127. In some embodiments, the conductivevias 133 are disposed at a surface of the semiconductor substrate thatfaces the integrated circuit dies 50. The conductive vias 133 maycomprise a metal, such as copper, and be formed by a damascene process,for example. The inclusion of the conductive vias 133 in thesemiconductor substrate 127 may further increase the thermalconductivity of the semiconductor substrate 127, thereby improvingthermal dissipation. FIG. 13 illustrates embodiment integrated circuitdies that are singulated with a symmetrical singulation process (e.g.,as described with FIG. 6A), but it should be appreciated that thepackage configuration of FIG. 13 may also be adapted to dies that aresingulated with an asymmetrical singulation process (e.g., as describedwith FIGS. 6B and 6C).

FIGS. 14A and 14B illustrate top-down views of the conductive vias 133in the semiconductor substrate 127. A position of a die 50 is shown inghost for reference. Each of the conductive vias 133 may have a diameterT_(D), which may be in a range of about 5 μm to about 12 μm. In someembodiments (as illustrated by FIG. 14A), the conductive vias 133 areuniformly distributed across the semiconductor substrate 127. In otherembodiments (as illustrated by FIG. 14B), a density of the conductivevias 133 is concentrated in a region of the semiconductor substrate 127that overlaps the dies 50. For example, a density of the conductive vias133 may be higher in a region that overlaps the dies 50 than outside ofthe region that overlaps the dies 50. By concentrating the conductivevias 133 in a region with relatively high thermal activity (e.g.,overlapping the dies 50), thermal dissipation may be further improved.

Embodiments may achieve advantages. In various embodiments, asemiconductor package includes a molded die that is bonded to a bulksemiconductor substrate, such as a bulk silicon substrate or the like.The semiconductor substrate can increase the volume of semiconductormaterial in the package to improve thermal dissipation. Further, thesemiconductor substrate is not encapsulated in the molding compound, andthe inclusion of the semiconductor substrate does not significantlyincreasing the volume of the molding compound in the semiconductorpackage. As a result, defects associated with increased molding compoundvolume, such as poor warpage control or the like, can be avoided.Optionally, conductive vias may be included in the semiconductorsubstrate to further improve thermal dissipation.

In some embodiments, a method includes bonding an integrated circuit dieto a first semiconductor substrate, wherein the first semiconductorsubstrate is free of active devices; dispensing a molding compound overthe first semiconductor substrate and around the integrated circuit die;and forming a redistribution structure over the molding compound and theintegrated circuit die, wherein the redistribution structure iselectrically connected to the integrated circuit die. Optionally, insome embodiments, the integrated circuit die comprises a secondsemiconductor substrate, and wherein a ratio of a first thickness of thefirst semiconductor substrate to a second thickness of the secondsemiconductor substrate is in a range of 0.5 to 2. Optionally, in someembodiments, the integrated circuit die comprises a second semiconductorsubstrate, and wherein a ratio of a first thickness of the firstsemiconductor substrate to a second thickness of the secondsemiconductor substrate is in a range of 1 to 2. Optionally, in someembodiments, bonding the integrated circuit die to the firstsemiconductor substrate comprises directly bonding a first dielectriclayer on the first semiconductor substrate to a second dielectric layeron a second semiconductor substrate of the integrated circuit die.Optionally, in some embodiments, the method further includes forming athird dielectric layer on the first semiconductor substrate; forming analignment mark in the third dielectric layer; and forming the firstdielectric layer on the third dielectric layer and the alignment mark.Optionally, in some embodiments, the first semiconductor substratecomprises a plurality of conductive vias. Optionally, in someembodiments, the method further includes singulating the integratedcircuit die from a wafer. Optionally, in some embodiments, singulatingthe integrated circuit die from the wafer comprises: patterning a recessin a second semiconductor substrate of the wafer; and after patterningthe recess, applying a blade to cut through a remainder of the wafer tothe recess. Optionally, in some embodiments, applying the bladecomprises aligning the blade to a center of the recess. Optionally, insome embodiments, applying the blade comprises aligning the blade to beoffset from a center of the recess.

In some embodiments, a package includes a first semiconductor substrate;an integrated circuit die bonded to the first semiconductor substratewith a dielectric-to-dielectric bond, wherein the integrated circuit diecomprises a second semiconductor substrate, and wherein the secondsemiconductor substrate comprises a first sidewall, a second sidewall,and a third sidewall opposite the first sidewall and the secondsidewall, and wherein the second sidewall is offset from the firstsidewall; a molding compound over the first semiconductor substrate andaround the integrated circuit die; and a redistribution structure overthe first semiconductor substrate and the integrated circuit die,wherein the redistribution structure is electrically connected to theintegrated circuit die. Optionally, in some embodiments, the secondsemiconductor substrate further comprises a fourth sidewall opposite thefirst sidewall and the second sidewall, and wherein the fourth sidewallis offset from the third sidewall. Optionally, in some embodiments, afirst distance that the first sidewall is offset from the secondsidewall is equal to a second distance that the fourth sidewall isoffset from the third sidewall. Optionally, in some embodiments, a firstdistance that the first sidewall is offset from the second sidewall isgreater than a second distance that the fourth sidewall is offset fromthe third sidewall. Optionally, in some embodiments, the third sidewallis linear and extends continuously from a topmost surface of the secondsemiconductor substrate to a bottommost surface of the secondsemiconductor substrate. Optionally, in some embodiments, the packagefurther includes a plurality of conductive vias in the firstsemiconductor substrate.

In some embodiments, a package includes a bulk substrate; an device diebonded to the bulk substrate, wherein the device die comprises asemiconductor substrate, and wherein a ratio of a thickness of the bulksubstrate to a thickness of the semiconductor substrate is in a range of0.5 to 2; a molding compound over the bulk substrate, wherein themolding compound encapsulates the device die without encapsulating thebulk substrate; and a redistribution layer on an opposing side of thedevice die as the bulk substrate. Optionally, in some embodiments, thebulk substrate further comprises a plurality of through vias.Optionally, in some embodiments, the plurality of through vias has auniform distribution across the bulk substrate. Optionally, in someembodiments, the plurality of through vias has a high density in a firstregion of the bulk substrate compared to a second region of the bulksubstrate, and wherein the first region of the bulk substrate overlapsthe device die.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method comprising: bonding an integrated circuit die to a firstsemiconductor substrate, wherein the first semiconductor substrate isfree of active devices; dispensing a molding compound over the firstsemiconductor substrate and around the integrated circuit die; forming aredistribution structure over the molding compound and the integratedcircuit die, wherein the redistribution structure is electricallyconnected to the integrated circuit die; and performing a singulationprocess through the redistribution structure, the molding compound, andthe first semiconductor substrate.
 2. The method of claim 1, wherein theintegrated circuit die comprises a second semiconductor substrate, andwherein a ratio of a first thickness of the first semiconductorsubstrate to a second thickness of the second semiconductor substrate isin a range of 0.5 to
 2. 3. The method of claim 1, wherein the integratedcircuit die comprises a second semiconductor substrate, and wherein aratio of a first thickness of the first semiconductor substrate to asecond thickness of the second semiconductor substrate is in a range of1 to
 2. 4. The method of claim 1, wherein bonding the integrated circuitdie to the first semiconductor substrate comprises directly bonding afirst dielectric layer on the first semiconductor substrate to a seconddielectric layer on a second semiconductor substrate of the integratedcircuit die.
 5. The method of claim 4 further comprising: forming athird dielectric layer on the first semiconductor substrate; forming analignment mark in the third dielectric layer; and forming the firstdielectric layer on the third dielectric layer and the alignment mark.6. The method of claim 1, wherein the first semiconductor substratecomprises a plurality of conductive vias.
 7. The method of claim 1further comprising singulating the integrated circuit die from a wafer.8. The method of claim 7, wherein singulating the integrated circuit diefrom the wafer comprises: patterning a recess in a second semiconductorsubstrate of the wafer; and after patterning the recess, applying ablade to cut through a remainder of the wafer to the recess.
 9. Themethod of claim 8, wherein applying the blade comprises aligning theblade to a center of the recess.
 10. The method of claim 8, applying theblade comprises aligning the blade to be offset from a center of therecess. 11.-20. (canceled)
 21. A method comprising: directly bonding afirst oxide layer of an integrated circuit die to a second oxide layeron a first semiconductor substrate, wherein the first semiconductorsubstrate is free of active devices, and wherein the first oxide layeris disposed on a backside of the integrated circuit die; dispensing amolding compound over the second oxide layer and around the integratedcircuit die; and forming a redistribution structure over the moldingcompound and the integrated circuit die, wherein the redistributionstructure is electrically connected to the integrated circuit die. 22.The method of claim 21 further comprising after forming theredistribution structure, singulating the first semiconductor substrateand the redistribution structure, wherein after singulation the firstsemiconductor substrate and the redistribution structure arecoterminous.
 23. The method of claim 21, wherein integrated circuit diecomprises a second semiconductor substrate, wherein the secondsemiconductor substrate comprises a first sidewall, a second sidewall,and a third sidewall opposite the first sidewall and the secondsidewall, and wherein the second sidewall is offset from the firstsidewall.
 24. The method of claim 23, wherein the second semiconductorsubstrate further comprises a fourth sidewall opposite the firstsidewall and the second sidewall, and wherein the fourth sidewall isoffset from the third sidewall.
 25. The method of claim 21, wherein thefirst semiconductor substrate further comprises a plurality ofconductive vias in the first semiconductor substrate.
 26. The method ofclaim 21, wherein an alignment mark is disposed between the second oxidelayer and the first semiconductor substrate.
 27. A method comprising:bonding a device die to a bulk substrate, wherein the device diecomprises a semiconductor substrate, and wherein a ratio of a thicknessof the bulk substrate to a thickness of the semiconductor substrate isin a range of 0.5 to 2; dispensing a molding compound over the bulksubstrate, wherein the molding compound encapsulates the device diewithout encapsulating the bulk substrate; planarizing the moldingcompound to expose the device die; and forming a redistribution layerover the molding compound and the device die.
 28. The method of claim27, wherein the bulk substrate further comprises a plurality of throughvias.
 29. The method of claim 28, wherein the plurality of through viashas a uniform distribution across the bulk substrate.
 30. The method ofclaim 28, wherein the plurality of through vias has a high density in afirst region of the bulk substrate compared to a second region of thebulk substrate, and wherein the first region of the bulk substrateoverlaps the device die.